STD100NH03L datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STD100NH03L

4/15

Electrical characteristics

(TCASE = 25°C unless otherwise specified)

Table 3.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 25mA, VGS = 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20

VDS = 20, TC = 125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

11.8

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 30A

VGS = 5V, ID = 30A

0.005

0.0060

0.0055

0.0105

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 10 V, ID = 30A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, f = 1 MHz,

VGS = 0

4100

680

Gate input resistance

f = 1MHz gate DC bias = 0

test signal level = 20mV

Open drain

1.3

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 10V, ID = 60A

VGS = 10V

11.8

7.3

Qoss

(2)

Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter Appendix A

Output charge

VDS = 16V, VGS = 0V

Qgls

(3)

Gate charge for synchronous operation

Third-quadrant gate charge

VDS < 0V, VGS = 10V

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