STGP10NB60S_05 datasheet(3/13 Pages) STMICROELECTRONICS

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STGP10NB60S - STGP10NB60SFP - STGB10NB60S

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Switching On

Table 9: Switching Off

(1)Pulse width limited by max. junction temperature.

(**)Losses Include Also the Tail ( Jedec Standardization)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VCE = 25 V , IC = 10 A

Cies

Input Capacitance

VCE = 25 V, f= 1 MHz, VGE = 0

610

Coes

Output Capacitance

Cres

Reverse Transfer

Capacitance

Total Gate Charge

VCE = 400 V, IC = 10 A,

VGE = 15 V

(see Figure 20)

ICL

Latching Current

Vclamp = 480 V , Tj = 150°C

RG = 1 kΩ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Current Rise Time

VCC = 480 V, IC = 10 A RG=1KΩ

VGE = 15 V

(see Figure 18)

0.7

0.46

µs

(di/dt)on

Eon (1)

Turn-on Current Slope

Turn-on Switching Losses

VCC= 480 V, IC = 10 A RG=1KΩ

VGE =15 V,Tj = 125°C

0.6

A/µs

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Cross-Over Time

Vcc = 480 V, IC = 10 A,

RG = 10 Ω , VGE = 15 V

TJ = 25 °C

(see Figure 18)

2.2

µs

tr(Voff)

Off Voltage Rise Time

1.2

µs

Current Fall Time

1.2

µs

Eoff (**)

Turn-off Switching Loss

5.0

Cross-Over Time

Vcc = 480 V, IC = 10 A,

RG = 10 Ω , VGE = 15 V

TJ = 125 °C

(see Figure 18)

3.8

µs

tr(Voff)

Off Voltage Rise Time

1.2

µs

Current Fall Time

1.9

µs

Eoff (**)

Turn-off Switching Loss

8.0

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