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GP30NC60W Datasheet(PDF) 4 Page - STMicroelectronics

Part # GP30NC60W
Description  N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

GP30NC60W Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGW30NC60W - STGP30NC60W
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-emitter
breakdown voltage
IC = 1mA, VGE = 0
600
V
VCE(SAT)
Collector-emitter saturation
voltage
VGE=15V, IC= 20A, Tj= 25°C
VGE=15V, IC= 20A,Tj= 125°C
2.1
1.8
2.5
V
V
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250µA
3.75
5.75
V
ICES
Collector-emitter leakage
current (VCE = 0)
VCE = Max rating,Tc=25°C
VCE = Max rating, Tc=125°C
10
1
µA
mA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20V , VCE = 0
± 100
nA
gfs
Forward transconductance
VCE = 15V, IC= 20A
15
S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25V, f = 1MHz, VGE=0
2080
175
52
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 390V, IC = 20A,
VGE = 15V,
(see Figure 16)
102
17.5
47
140
nC
nC
nC
ICL
Turn-Off SOA minimum
current
Vclamp = 480V , Tj = 150°C
RG = 10Ω, VGE= 15V
200
A



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