STGW35NB60SD datasheet(3/13 Pages) STMICROELECTRONICS

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STGW35NB60SD

2 Electrical characteristics

3/13

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 3.

Static

Table 4.

Dynamic

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collectro-Emitter Breakdown

Voltage

IC = 1mA, VGE = 0

600

VCE(SAT)

Collector-Emitter Saturation

Voltage

VGE= 15V, IC= 20A, Tj= 25°C

VGE= 15V, IC= 20A, Tj= 125°C

1.25

1.2

1.7

VGE(th)

Gate Threshold Voltage

VCE= VGE, IC= 250µA

2.5

ICES

Collector-Emitter Leakage

Current (VGE = 0)

VCE = Max Rating,Tc=25°C

VCE = Max Rating, Tc=125°C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20V , VCE = 0

± 100

gfs

Forward Transconductance

VCE = 10V, IC= 18A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VCE = 25V, f = 1 MHz, VGE = 0

1820

167

Qge

Qgc

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

VCE = 480V, IC = 20A,

VGE = 15V,

(see Figure 17)

115

ICL

Turn-Off SOA Minimum

Current

Vclamp = 480V , Tj = 125°C

RG = 100Ω

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