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GW35NB60SD Datasheet(PDF) 2 Page - STMicroelectronics

Part # GW35NB60SD
Description  N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

GW35NB60SD Datasheet(HTML) 2 Page - STMicroelectronics

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1 Electrical ratings
STGW35NB60SD
2/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
IC Note 4
Collector Current (continuous) at 25°C
70
A
IC Note 4
Collector Current (continuous) at 100°C
35
A
ICM Note 1
Collector Current (pulsed)
250
A
VGE
Gate-Emitter Voltage
± 20
V
If
Diode RMS Forward Current at TC = 25°C
30
A
PTOT
Total Dissipation at TC = 25°C
200
W
Tj
Operating Junction Temperature
– 55 to 150
°C
Tstg
Storage Temperature
TL
Maximum Lead Temperature for Soldering
Purpose (1.6mm from case, for 10sec.)
300
°C
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case (IGBT)
--
--
0.625
°C/W
Rthj-case
Thermal Resistance Junction-case (DIODE)
--
--
1.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
--
--
50
°C/W



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