STP80NS04ZB datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STP80NS04ZB

Description	N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

PDF	6 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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PRELIMINARY DATA

May 2003

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STP80NS04ZB

N-CHANNEL CLAMPED 7.5m

Ω - 80A TO-220

FULLY PROTECTED MESH OVERLAY™ MOSFET

s

TYPICAL RDS(on) = 0.0075 Ω

s

100% AVALANCHE TESTED

s

LOW CAPACITANCE AND GATE CHARGE

s

175 oC MAXIMUM JUNCTION

TEMPERATURE

DESCRIPTION

This fully clamped Mosfet is produced by using the latest

advanced Company’s Mesh Overlay process which is

based on a novel strip layout.

The inherent benefits of the new technology coupled with

the extra clamping capabilities make this product

particularly suitable for the harshest operation conditions

such

as

those

encountered

in

the

automotive

environment. Any other application requiring extra

ruggedness is also recommended.

APPLICATIONS

s

ABS, SOLENOID DRIVERS

s

MOTOR CONTROL

s

DC-DC CONVERTERS

TYPE

VDSS

RDS(on)

ID

STP80NS04ZB

CLAMPED

<0.008

Ω

80 A

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

CLAMPED

V

VDG

Drain-gate Voltage

CLAMPED

V

VGS

Gate- source Voltage

CLAMPED

V

ID

Drain Current (continuous) at TC = 25°C

80

A

ID

Drain Current (continuous) at TC = 100°C

60

A

IDG

Drain Gate Current (continuous)

± 50

mA

IGS

Gate SourceCurrent (continuous)

± 50

mA

IDM(•)

Drain Current (pulsed)

320

A

Ptot

Total Dissipation at TC = 25°C

200

W

Derating Factor

1.33

W/°C

VESD(G-S)

Gate-Source ESD (HBM - C = 100pF, R=1.5 k

Ω)4

kV

VESD(G-D)

Gate-Drain ESD (HBM - C = 100pF, R=1.5 k

Ω)4

kV

VESD(D-S)

Drain-source ESD (HBM - C = 100pF, R=1.5 k

Ω)4

kV

Tstg

Storage Temperature

-65 to 175

°C

Tj

Max. Operating Junction Temperature

-40 to 175

°C

INTERNAL SCHEMATIC DIAGRAM

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