STP120NF04 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STP120NF04

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max Rating

VDS = Max Rating,

TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

2.8

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 50 A

0.0047 0.0050

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 50A

150

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

5100

1300

160

td(on)

Turn-on delay time

rise time

VDD = 20 V, ID = 60 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

220

td(off)

Turn-off delay time

fall time

VDD = 20 V, ID = 60 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=32V, ID = 120A

VGS =10V

(see Figure 19)

110

150

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