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STP120NH03L Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP120NH03L
Description  N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC conversion
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP120NH03L Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB120NH03L - STI120NH03L - STP120NH03L
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
TC=125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
100
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
11.8
3
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
VGS = 5V, ID = 30A
0.005
0.006
0.0055
0.0105
Ω
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
4100
680
70
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off voltage rise time
Fall time
VDD = 15V, ID = 30A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
16
95
48
23
ns
ns
ns
ns
Rg
Gate input resistance
f = 1MHz gate DC bias=0
test signal level=20mV
open drain
1.3
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15V, ID = 60A
VGS =10V
(see Figure 13)
57
12
7
77
nC
nC
nC
Qoss
(1)
1.
Qoss = Coss*
∆V
IN, Coss = Cgd + Cds. See power losses calculation
Output charge
VDS = 24V, VGS = 0
27
ns
Qgls
(2)
2.
Gate charge for synchronous operation.
Third-quadrant gate
charge
VDS < 0, VGS= 0V
55
ns



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