2N6504G datasheet(2/7 Pages) ONSEMI

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2N6504 Series

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

*Peak Repetitive Off−State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)

2N6504

2N6505

2N6507

2N6508

2N6509

VDRM,

VRRM

100

400

600

800

On-State Current RMS (180

° Conduction Angles; TC = 85°C)

IT(RMS)

Average On-State Current (180

° Conduction Angles; TC = 85°C)

IT(AV)

Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)

ITSM

250

Forward Peak Gate Power (Pulse Width

≤ 1.0 ms, TC = 85°C)

PGM

Forward Average Gate Power (t = 8.3 ms, TC = 85°C)

PG(AV)

0.5

Forward Peak Gate Current (Pulse Width

≤ 1.0 ms, TC = 85°C)

IGM

2.0

Operating Junction Temperature Range

−40 to +125

°C

Storage Temperature Range

Tstg

−40 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

*Thermal Resistance, Junction−to−Case

RqJC

1.5

°C/W

*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

* Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

−

2.0

ON CHARACTERISTICS

* Forward On−State Voltage (Note 2) (ITM = 50 A)

VTM

−

1.8

* Gate Trigger Current (Continuous dc)

TC = 25°C

(VAK = 12 Vdc, RL = 100 W)TC = −40°C

IGT

−

9.0

−

* Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = −40°C)

VGT

−

1.0

1.5

Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C)

VGD

0.2

−

* Holding Current

TC = 25°C

(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = −40°C

−

* Turn-On Time (ITM = 25 A, IGT = 50 mAdc)

tgt

−

1.5

2.0

Turn-Off Time (VDRM = rated voltage)

(ITM = 25 A, IR = 25 A)

(ITM = 25 A, IR = 25 A, TJ = 125°C)

−

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform)

dv/dt

−

*Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

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