© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 7

1

Publication Order Number:

MMDF2C03HD/D

MMDF2C03HD

Preferred Device

Power MOSFET

2 Amps, 30 Volts

Complementary SO−8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain-to-source diode has a very low reverse recovery time.

MiniMOS

t devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc-dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

Features

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

30

Vdc

Gate−to−Source Voltage

± 20

Vdc

Drain Current − Continuous

N−Channel

P−Channel

N−Channel

P−Channel

4.1

3.0

21

15

A

Operating and Storage Temperature Range

−55 to 150

°C

2.0

W

Thermal Resistance, Junction−to−Ambient

(Note 2)

62.5

°C/W

Single Pulse Drain−to−Source Avalanche

N−Channel

P−Channel

324

324

mJ

Max Lead Temperature for Soldering, 0.0625

″

from case. Time in Solder Bath is 10 seconds

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Negative signs for P−Channel device omitted for clarity.

2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with

one die operating, 10 sec. max.

N−Source

1

2

3

4

8

7

6

5

N−Gate

P−Source

P−Gate

N−Drain

N−Drain

P−Drain

P−Drain

Device

Package

ORDERING INFORMATION

MMDF2C03HDR2

SO−8

2500 Tape & Reel

N−Channel

D

S

G

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.

D

S

G

P−Channel

2 AMPERES, 30 VOLTS

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MMDF2C03HDR2G

SO−8

(Pb−Free)

2500 Tape & Reel

SO−8

CASE 751

STYLE 14

MARKING

DIAGRAM

D2C03 = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

D2C03

AYWW

G

G

1

8

1

8