DTA123EL-AL3-6-R datasheet(2/3 Pages) UTC

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DTA123E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-086,A

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-12 ~ +10

Output Current

IOUT

-100

SOT-523

150

Power Dissipation

SOT-23/SOT-323

200

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL SPECIFICATIONS (Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN(OFF)

VCC =-5V, IOUT =-100µA

-0.5

Input Voltage

VIN(ON)

VOUT =-0.3V, IOUT =-20mA

-3

Output Voltage

VOUT(ON) IOUT/IIN =10mA/-0.5mA

-0.1

-0.3

Input Current

IIN

VIN=-5V

-3.8

Output Current

IOUT(OFF) VCC =-50V, VIN =0V

-0.5

µA

DC Current Gain

GIN

VOUT =-5V, IOUT =-20mA

Input Resistance

1.54

2.2

2.86

KΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE =-10V, IE =−5mA, f=100MHz *

250

MHz

* Transition frequency of the device

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