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STWA40N60M2 Datasheet(PDF) 6 Page - STMicroelectronics |
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STWA40N60M2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Figure 7. Capacitance variations (V) (pF) 1 100 Ciss Coss Crss 10000 C 1000 100 10 1 0.1 10 VDS AM16104v1 Figure 8. Output capacitance stored energy Eoss 5 0 0 100 VDS(V) (µJ) 400 200 300 500 600 10 15 AM16105v1 Figure 9. Normalized gate thereshold voltage vs temperature VGS(th) 0.9 0.8 0.7 0.6 TJ(°C) (norm) -50 1.0 ID=250µA 0 50 100 1.1 AM15718v1 Figure 10. Normalized on-resistance vs temperature RDS(on) 2.1 1.7 1.3 0.9 TJ(°C) (norm) 0.5 -50 0 50 100 ID=17 A AM15719v1 Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS -50 TJ(°C) (norm) D AM15714v1 0.90 Figure 12. Source-drain diode forward characteristics VSD 0 ISD(A) (V) 6 0.5 0.6 0.7 0.8 0.9 12 18 1.0 TJ= -50°C TJ= 25°C TJ= 150°C 24 30 GIPD240920132025FSR STWA40N60M2 Electrical characteristics (curves) DS11877 - Rev 2 page 6/12 |
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