2SC3835 datasheet(1/4 Pages) UTC

Part #	2SC3835

Description	SWITCH NPN TRANSISTOR

PDF	4 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SC3835

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R214-002,A

SWITCH NPN TRANSISTOR

APLLICATION

*Humidifier,DC-DC converter,and general purpose.

TO-3PN

1

1: BASE 2:COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

200

V

Collector-Emitter Voltage

VCEO

120

V

Emitter-Base Voltage

VEBO

8

V

Base Current

IB

3

A

Collector Current

7

A

Collector Current (PULSE)

Ic

14

A

Collector Power Dissipation( Tc=25

°C )

Pc

70

W

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Emitter Breakdown Voltage

BVCEO

Ic= 50mA

120

V

Collector Cut-Off Current

ICBO

VCB=200V, IE=0

100

μ

A

Emitter Cut-Off Current

IEBO

VEB= 8V, Ic =0

100

μ

A

DC Current Transfer Ratio

hFE

VCE= 4V,Ic= 3A

70

220

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=3A ,IB=0.3A

0.5

V

Base-Emitter Saturation Voltage

VBE(sat)

Ic=3A ,IB=0.3A

1.2

V

Transition Frequency

fT

VCE=12V,IE=-0.5mA

30

MHz

Output Capacitance

Cob

VCB= 10V, IE= 0 A,f=1MHz

110

pF

Turn-on Time

ton

0.5

µs

Storage Time

tstg

3.0

µs

Fall Time

tf

See specified Test Circuit

0.5

µs

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