UTCLM4880

CMOS IC

2

QW-R502-033,A

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

6.0

V

Input Voltage

V

ESD Susceptibility (Note 3)

3500

V

ESD Susceptibility (Note 4)

ESD

250

V

Power Dissipation (Note 5)

Internally limited

Operating Temperature

Topr

-40 ~ +85

°C

Storage Temperature

Tstg

-65 ~ +150

°C

Junction Temperature

Tj

150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal resistance from junction to Case

DIP-8

SOP-8

37

35

°C/W

Thermal resistance from junction to Ambient

DIP-8

SOP-8

107

170

°C/W

OPERATING RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

2.7 ~ 5.5

V

-40 ~ +85

℃

(Ta=25

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Supply Voltage

2.7

5.5

V

Quiescent Power Supply Current

3.6

6.0

mA

Shutdown Current

0.7

5

µA

Output Offset Voltage

Vos

5

50

mV

Output Power

Po

THD=0.1%(max)

Ω

Ω

THD+N=10%

Ω

Ω

200

250

85

325

110

mW

mW

mW

mW

Total Harmonic Distortion + Noise

THD+N

Ω, Po=200mW

Ω, Po=75mW

0.03

0.02

%

%

Power Supply Rejection Ratio

PSRR

50

dB

Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.

Note 2: Absolute Maximum Ratings indicate limits beyond which damage may occur. Operating Ratings indicate

conditions for which the device is functional, but do not guarantee specific performance limits. Electrical

Characteristics state DC and AC electrical specifications under particular test conditions which guarantee

specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are

not guaranteed for parameters where no limit is given, however, the typical value is a good indication of