UTC2SC5305

NPN EPITAXIAL SILICON TRANSISTOR

1

www.unisonic.com.tw

QW-R203-028,A

HIGH VOLTAGE HIGH SPEED POWER

SWITCHING TRANSISTOR

FEATURES

* High hFE for Low base drive requirement

* Suitable for half bridge light ballast Applications

* Built-in Free-wheeling Diode makes it specially

suitable for light ballast Applications

* Well controlled storage-time spread for all range of hFE

TO-220

1

1: Base 2: Collector 3: Emitter

*Pb-free plating product number: 2SC5305L

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

800

V

Collector Emitter Voltage

400

V

Emitter Base Voltage

12

V

Collector Current (DC)

5

A

Collector Current (Pulse)*

10

A

Base Current (DC)

2

A

Base Current (Pulse)*

4

A

75

W

Junction Temperature

150

℃

Storage Temperature

-65 ~ 150

℃

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance

Junction to Case

Junction to Ambient

1.65

62.5

℃

/W