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2SD1664 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SD1664
Description  MEDIUM POWER NPN TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1664 Datasheet(HTML) 2 Page - Unisonic Technologies

  2SD1664 Datasheet HTML 1Page - Unisonic Technologies 2SD1664 Datasheet HTML 2Page - Unisonic Technologies 2SD1664 Datasheet HTML 3Page - Unisonic Technologies  
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UTC2SD1664
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R208-025,A
ELECTRICAL CHARACTERISTICS CURVES
00.2
500
1
Base toEmitterVoltage:V BE(V)
Figure 1.Grounded Emitter
PropagationCharacteristics
200
12
5 10 20
200
50
Collector Current :Ic(mA)
Figure 3.DC Current Gain
vs.Collector Current (I)
100
0.4 0.6 0.8
1.6
1.4
1.2
1.0
2
5
10
VCE=6V
Ta=100℃
Ta=25℃
Ta=55℃
0
500
0
Collector toEmitterVoltage:V CE(V)
Figure 2.Grounded Emitter
OutputCharacteristics
100
0.4
0.8
1.6
2.0
1.2
200
300
400
2.0mA
IB =0mA
Ta=25℃
2.5mA
1.5mA
1.0mA
0.5mA
3.0mA
3.5mA
4.0mA
4.5
mA
50 100 200 5001000
500
1000
Ta=25℃
Vc E= 3V
VcE= 1V
12
5 10 20
200
50
Collector Current :Ic(mA)
Figure 4.DC Current Gain
vs.Collector Current (II)
100
50 100 200 500 1000
500
1000
VcE= 3V
Ta=100℃
Ta=25℃
Ta= -55 ℃
12
5
10 20
0.05
0.01
Collector Current :Ic(mA)
Figure5.Collector-emitterSaturation
Voltage vs.CollectorCurrent (I)
0.02
50 100200 5001000
0.1
0.2
0.5
Ta=25℃
IC/IB=10
20
50
100
2000
2000
IC/IB=50
IC/IB=20
12
5
10 20
0.05
0.01
Collector Current :Ic(mA)
Figure6.Collector-emitterSaturation
Voltage vs.CollectorCurrent (II)
0.02
50 100200 5001000
0.1
0.2
0.5
Ta=25℃
Ta=100℃
Ta=-40℃
IC/IB=10



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