D65H2 datasheet(1/2 Pages) UTC

Part #	D65H2

Description	PNP EXPITAXIAL SILICON TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTCD65H2

PNPEXPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R203-002,A

PNP EXPITAXIAL SILICON

TRANSISTOR

DESCRIPTION

The UTC D65H2 is a general purpose power application

and switching.

FEATURE

*Low Collector-Emitter Saturation Voltage

VCE(sat)=-1v(MAX)@-15A

*Fast Switching Speeds

TO-220

1

1:BASE 2:COLLECTOR 3:EMITTER

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

PARAMETER

SYMBOL

VALUE

UNIT

Collector to Emitter Voltage

VCEO

-30

V

Emitter To Base Voltage

VEBO

-5

V

Collector Current(DC)

IC

-15

A

Collector Current(Pulse)

IC

-25

A

Collector Dissipation(Tc=25

°C)

Pc

50

W

Collector Dissipation(Ta=25

°C)

Pc

1.67

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55 ~ +150

°C

*PW<=10mS,Duty Cycle<=50%

ELECTRICAL CHARACTERISTICS(Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cutoff Current

ICES

VCE=Rated ; VCEO,VEB=0

-10

µA

Emitter Cutoff current

IEBO

VEB=-5V,Ic=0

-10

µA

Collector Emitter Saturation

Voltage

VCE(SAT)

IC=-10A,IB=-0.1A

0.6

V

Base Emitter Saturation Voltage

VBE(SAT)

IC=-10A,IB=-1A

-1.5

V

DC Current Gain

hFE1

IC=-10A,VCE=-1V

100

Current Gain Bandwidth Product

FT

VCE=-10V,IC=-0.5A

40

MHZ

Output Capacitance

CCB

VCB=-10V,f=1MHZ

350

PF

Turn On Time

ton

Ic=-5A,IB=-0.5A

150

nS

Storage Time

tstg

IB=-0.5A

600

nS

Fall Time

tf

120

nS

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