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NTLJS3113P Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTLJS3113P
Description  Power MOSFET ??0 V, ??.7 A, uCool TM Single 2x2 mm, WDFN Package
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTLJS3113P Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1
Publication Order Number:
NTLJS3113P/D
NTLJS3113P
Power MOSFET
−20 V, −7.7 A,
mCoolt Single P−Channel,
2x2 mm, WDFN Package
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• 2x2 mm Footprint Same as SC−88 Package
• Lowest RDS(on) Solution in 2x2 mm Package
• 1.5 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• DC−DC Converters (Buck and Boost Circuits)
• Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
• High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
ID
−5.8
A
TA = 85°C
−4.4
t
≤ 5 s
TA = 25°C
−7.7
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.9
W
t
≤ 5 s
3.3
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
−3.5
A
TA = 85°C
−2.5
Power Dissipation
(Note 2)
TA = 25°C
PD
0.7
W
Pulsed Drain Current
tp = 10 ms
IDM
−23
A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−2.8
A
Lead Temperature for Soldering Purposes
(1/8
″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm2, 2 oz Cu).
http://onsemi.com
−20 V
50 m
W @ −2.5 V
40 m
W @ −4.5 V
RDS(on) MAX
−7.7 A
ID MAX (Note 1)
V(BR)DSS
75 m
W @ −1.8 V
200 m
W @ −1.5 V
G
S
P−CHANNEL MOSFET
D
J8
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
J8M
G
G
1
2
3
6
5
4
WDFN6
CASE 506AP
MARKING
DIAGRAM
Device
Package
Shipping†
ORDERING INFORMATION
NTLJS3113PT1G
WDFN6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
3
6
5
4
D
D
G
D
D
S
(Top View)
PIN CONNECTIONS
D
S
S
D
Pin 1


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