STTH30L06G datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

STTH30L06

2/10

Characteristics

To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 IF2(RMS)

Table 1.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS)

RMS forward voltage

IF(AV)

Average forward current

TO-220AC / TO-247 / D2PAK Tc = 125° C δ = 0.5

DOP3I

Tc = 95° C δ = 0.5

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

160

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

TO-220AC / TO-247 / D2PAK

1.1

°C/W

DOP3I

1.7

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 150° C

800

(2)

Forward voltage drop

Tj = 25° C

IF = 30 A

1.55

Tj = 150° C

1.0

1.25

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

Table 4.

Dynamic Characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery

time

Tj = 25° C

IF = 0.5 A Irr = 0.25 A IR =1 A

IF = 1 A dIF/dt = 50 A/µs VR =30 V

IRM

Reverse recovery

current

Tj = 125° C

IF = 30 A

VR = 400 V

dIF/dt = 100 A/µs

11.5

tfr

Forward recovery

time

Tj = 25° C

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

500

VFP

Forward recovery

voltage

Tj = 25° C

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

2.5

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