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BYG60D Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYG60D
Description  Fast soft-recovery controlled avalanche rectifiers
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG60D Datasheet(HTML) 2 Page - NXP Semiconductors

  BYG60D Datasheet HTML 1Page - NXP Semiconductors BYG60D Datasheet HTML 2Page - NXP Semiconductors BYG60D Datasheet HTML 3Page - NXP Semiconductors BYG60D Datasheet HTML 4Page - NXP Semiconductors BYG60D Datasheet HTML 5Page - NXP Semiconductors BYG60D Datasheet HTML 6Page - NXP Semiconductors  
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1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
cathode
band
Top view
Side view
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG60D
−
200
V
BYG60G
−
400
V
BYG60J
−
600
V
BYG60K
−
800
V
BYG60M
−
1000
V
VR
continuous reverse voltage
BYG60D
−
200
V
BYG60G
−
400
V
BYG60J
−
600
V
BYG60K
−
800
V
BYG60M
−
1000
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 100 °C; see Fig.2
−
1.90
A
averaged over any 20 ms period;
Al2O3 PCB mounting (see Fig.7);
Tamb =60 °C; see Fig.3
−
0.90
A
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
Tamb =60 °C; see Fig.3
−
0.65
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
−
25
A



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