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BYR29F Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYR29F Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes BYR29F series ultrafast Fig.1. Definition of t rr, Qs and Irrm Fig.2. Definition of V fr Fig.3. Maximum forward dissipation P F = f(IF(AV)); square wave where I F(AV) =IF(RMS) x √D. Fig.4. Maximum forward dissipation P F = f(IF(AV)); sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Fig.5. Maximum permissible rms current I F(RMS) versus pulse width. Fig.6. Maximum t rr at Tj = 25˚C and 100˚C. Q s 100% 10% time dI dt F I R I F I rrm t rr 0 123 45 67 8 0 5 10 15 a = 1.57 1.9 2.2 2.8 4 BYR29 IF(AV) / A PF / W Ths(max) / C 150 106 73 139 84 128 117 95 Vo = 1.26 V Rs = 0.03 Ohms time time V F V fr V F I F 10us 100us 1ms 10ms 100ms 0 2 4 6 8 10 12 BT134W tp / s IF(RMS) / A 02 468 10 12 0 5 10 15 20 D = 1.0 0.5 0.2 0.1 BYR29 IF(AV) / A PF / W Ths(max) / C 150 122.5 95 40 67.5 Vo = 1.26 V Rs = 0.03 Ohms D = tp tp T T t I 1 10 trr / ns 110 100 1000 100 dIF/dt (A/us) 1A IF=10 A Tj = 25 C Tj = 100 C September 1998 3 Rev 1.400 |
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