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BYV40E Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYV40E
Description  Rectifier diodes ultrafast, rugged
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV40E Datasheet(HTML) 2 Page - NXP Semiconductors

  BYV40E Datasheet HTML 1Page - NXP Semiconductors BYV40E Datasheet HTML 2Page - NXP Semiconductors BYV40E Datasheet HTML 3Page - NXP Semiconductors BYV40E Datasheet HTML 4Page - NXP Semiconductors BYV40E Datasheet HTML 5Page - NXP Semiconductors BYV40E Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BYV40E series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
Ω
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
one or both diodes conducting
-
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:11
-
70
-
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 0.5 A; Tj = 150˚C
-
0.50
0.7
V
I
F = 1.5 A
-
0.82
1.0
V
I
R
Reverse current
V
R = VRWM; Tj = 100 ˚C
-
100
300
µA
V
R = VRWM
-5
10
µA
Q
s
Reverse recovery charge
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-
-
11
nC
t
rr1
Reverse recovery time
I
F = 1 A; VR ≥ 30 V;
-
-
25
ns
-dI
F/dt = 100 A/µs
t
rr2
Reverse recovery time
I
F = 0.5 A to IR = 1 A; Irec = 0.25 A
-
10
20
ns
V
fr
Forward recovery voltage
I
F = 2 A; dIF/dt = 20 A/µs-
3
-
V
September 1998
2
Rev 1.300



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