BYV99 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1996 Feb 19

Philips Semiconductors

Product speciﬁcation

Ultra fast low-loss

controlled avalanche rectiﬁer

BYV99

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

≥40 µm, see Fig.10.

For more information please refer to the

“General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; Tj =Tj max; see Fig. 7

−−

1.5

IF = 1 A; see Fig. 7

−−

2.7

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

700

−−

reverse current

VR =VRRMmax;

see Fig. 8

−−

µA

VR =VRRMmax; Tj = 150 °C;

see Fig. 8

−−

µA

trr

reverse recovery time

when switched from IF = 0.5 A

to IR = 1 A; measured at

IR = 0.25 A; see Fig. 12

−−

diode capacitance

f = 1 MHz; VR = 0 V; see Fig. 9

−

maximum slope of reverse

recovery current

when switched from IF = 1 A to

VR ≥ 30 V and dIF/dt = −1A/µs;

see Fig.11

−−

3A/

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

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