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LC33CDQ Datasheet(PDF) 2 Page - UN Semiconducctor INC |
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LC33CDQ Datasheet(HTML) 2 Page - UN Semiconducctor INC |
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2 / 5 page ![]() Characteristic Curves Fig2. Power Rating Derating Curve Fig4.Clamping Voltage vs.Peak Pulse Current ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Electrical Characteristics @ 25℃ Unless Otherwise Specified ) Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/4 LC33CDQ Transient Voltage Suppressors for ESD Protection Fig3. ESD Pulse Waveform(according to IEC61000-4-2) Fig1. 8/20μs Pulse Waveform VRWM VBR IR CJ VC Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction capacitance Positive Clamping Voltage -- IT=1mA; VRWM =3.3V;T=25°C VR =0 V,f=1MHz; IPP =1.0 A, TP =8/20μs; IPP =2.0 A, TP =8/20μs; IPP =4.0A, TP =8/20μs; -- 4.0 -- -- -- -- -- -- -- -- 0.8 -- -- -- 3.3 -- 1 -- 6.3 8.7 10.0 V V μA pF V V V Characteristics Symbol Test Conditions Typ. Max. Unit Min. 0 5 10 15 20 25 30 120 tr 100 80 60 40 Peak Value IPP 20 0 td=t IPP/2 TEST WAVEFORM PARAMETERS tr=8μs td=20μs t - Time (μs) 0 25 50 75 100 125 150 110 100 40 30 20 10 0 90 80 70 60 50 Ambient Temperature – TA (ºC) 100% 90% 10% tr 30ns = Time 60ns |
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