Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

1

2

4

-100

100

10

Ω

V

nA

nA

µ

A

V

S

2

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Test Condition

Typ

Max

650

f = 1.0 MHz

1760

165

20

19

6

36

6

38

12

72

12

30.2

9.4

8

10

1.5

6

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

4

40.1

CEP1175/CEB1175

CEF1175

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

e.Limited only by maximum temperature allowed .

f .Pulse width limited by safe operating area .