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FS150R17N3E4 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FS150R17N3E4 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 6 page ![]() ISGM2016 eq FS150R17N3E4 IGBT Module www.iscsemi.com 1 First version DESCRIPTION · VCE(sat) with positive temperature coefficient · Low VCE(sat) · Low Switching Loss · High current capability · Short circuit rated APPLICATIONS · Motor Drives · Servo Drives IGBT, INVERTER MAXIMUM RATED VALUES(TC=25℃ UNLESS OTHERWISE SPECIFIED) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VGES Gate-Emitter Voltage ± 20 V IC ContinuousDCcollectorcurrent TJ=175℃; TC=100℃ 150 A ICM Repetitive peak collector current 300 A TJOP Operating junction temperature -40~150 ℃ TJMAX Maximum junction temperature 175 ℃ PD Power Dissipation , TC=25℃; TJ=175℃ 835 W |
Similar Part No. - FS150R17N3E4 |
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Similar Description - FS150R17N3E4 |
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