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HEF4030BT Datasheet(PDF) 3 Page - NXP Semiconductors |
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HEF4030BT Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 3 page ![]() January 1995 3 Philips Semiconductors Product specification Quadruple exclusive-OR gate HEF4030B gates AC CHARACTERISTICS VSS = 0 V; Tamb =25 °C; CL = 50 pF; input transition times ≤ 20 ns VDD V SYMBOL TYP. MAX. TYPICAL EXTRAPOLATION FORMULA Propagation delays In → On 5 85 175 ns 57 ns + (0,55 ns/pF) C L HIGH to LOW 10 tPHL 35 75 ns 24 ns + (0,23 ns/pF) C L 15 30 55 ns 22 ns + (0,16 ns/pF) C L 5 75 150 ns 47 ns + (0,55 ns/pF) C L LOW to HIGH 10 tPLH 30 65 ns 19 ns + (0,23 ns/pF) C L 15 25 50 ns 17 ns + (0,16 ns/pF) C L Output transition times 5 60 120 ns 10 ns + (1,0 ns/pF) C L HIGH to LOW 10 tTHL 30 60 ns 9 ns + (0,42 ns/pF) C L 15 20 40 ns 6 ns + (0,28 ns/pF) C L 5 60 120 ns 10 ns + (1,0 ns/pF) C L LOW to HIGH 10 tTLH 30 60 ns 9 ns + (0,42 ns/pF) C L 15 20 40 ns 6 ns + (0,28 ns/pF) C L VDD V TYPICAL FORMULA FOR P ( µW) Dynamic power 5 1 100 fi +∑(fo CL) × VDD2 where dissipation per 10 4 900 fi +∑(fo CL) × VDD2 fi = input freq. (MHz) package (P) 15 14 400 fi +∑(fo CL) × VDD2 fo = output freq. (MHz) CL = load capacitance (pF) ∑(f oCL) = sum of outputs VDD = supply voltage (V) |
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