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ISCNH465D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISCNH465D
Description  N-Channel MOSFET
PDF  5 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH465D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISCNH465D
N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
1000
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 1000V; VGS= 0
--
--
1
uA
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
3.0
--
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 1.5A
--
--
7
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
--
512
--
pF
Coss
Output Capacitance
--
53
--
Crss
Reverse Transfer Capacitance
--
11
--
Rg
Gate Resistance
f = 1.0MHz
--
8.2
--
Ω
Qg
Total Gate Charge
VDD = 800V,
ID = 3A,
VGS = 10V
--
24.5
--
nC
Qgs
Gate-Source Charge
--
2.6
--
Qgd
Gate-Drain Charge
--
15
--
td(on)
Turn-on Delay Time
VDD =500V,
ID =3.0A,
RG = 25Ω
--
36
--
ns
tr
Turn-on Rise Time
--
13.5
--
td(off)
Turn-off Delay Time
--
92
--
tf
Turn-off Fall Time
--
44
--
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
--
--
3
A
ISM
Pulsed Source Current
--
--
12
VSD
Diode Forward Voltage
ISD= 1.5A; VGS= 0V
--
--
1.4
V
trr
Reverse Recovery Time
VDD = 500V,IF =3A,
diF/dt = 100A /μs
--
610
--
ns
Qrr
Reverse Recovery Charge
--
3.5
--
uC



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