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UT3419G-AE3-R Datasheet(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Part # UT3419G-AE3-R
Description  P-Channel 20-V (D-S) MOSFET
PDF  9 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT3419G-AE3-R Datasheet(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Package Limited
Power, Junction-to-Foot
0
0.5
1
1.5
2
2.5
3
025
50
75
100
125
150
T
C - Case Temperature (°C)
Power, Junction-to-Ambient
0
0.2
0.4
0.6
0.8
1
025
50
75
100
125
150
T
A - Ambient Temperature (°C)
UT3419G-AE3-R
www.VBsemi.com
5
服务热线:400-655-8788



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