JA101R datasheet(4/8 Pages) PHILIPS

4 / 8 page

1998 Aug 04

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

JA101

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −45 V

−−−15

IE = 0; VCB = −45 V; Tj = 125 °C

−−−4

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −1 mA; VCE = −5V

JA101

135

−

600

JA101P

135

−

270

JA101Q

200

−

400

JA101R

300

−

600

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−−300 mV

IC = −100 mA; IB = −5mA

−−500 −

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−700 −

IC = −100 mA; IB = −5mA

−−850 −

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−550 −−700 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

6pF

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

130

−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

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