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78D09 Datasheet(PDF) 6 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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78D09 Datasheet(HTML) 6 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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6 / 9 page ![]() Electrical Characteristics(78D12) (Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=19V, unless otherwise specified, CI = 0.33μF, CO=0.1μF) Parameter Symbol Conditions Value Unit Min Typ Max Output Voltage VO IO= 5mA~350mA VI=14.5~27V 11.4 12 12.6 V Line Regulation(Note) △V O IO = 200mA Tj =25°C VI=14.5V~30V 100 mV VI=16V~30V 50 Load Regulation(Note) △V O Tj =25°C IO= 5mA~500mA 240 mV IO= 5mA~200mA 120 Quiescent Current IQ Tj =25°C 8.0 mA Quiescent Current Change △I Q IO=5mA~350mA 0.5 mA IO = 200mA,VI=14.5~30V 0.8 Output Voltage Drift △V /△T IO = 5mA ,Tj = 0 ~125°C -0.8 mV/°C Output Noise Voltage VN f =10HZ~100KHZ 75 μV Ripple Rejection RR f = 120Hz, VI = 15~ 25V 80 dB Dropout Voltage VD T j =25°C, IO = 500mA 2 V Short Circuit Current ISC T j =25 , VI= 35V 800 mA Peak Current IPK T j =25°C 900 mA Notes: Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects must be taken into account separately. Pulse testing with low duty is used. 6 6 www.umw-ic.com 友台半导体有限公司 www.umw-ic.com 友台半导体有限公司 78DXX UMW R |
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