DS30296 Rev. 7 - 2

1 of 7

CTA2P1N

www.diodes.com

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 2)

150

mW

Thermal Resistance, Junction to Ambient (Note 2)

833

°

C/W

Operating and Storage and Temperature Range

-55 to +150

°

C

Features

A

M

J

L

D

B C

H

K

G

F

A80

CTA2P1N

COMPLEX TRANSISTOR ARRAY

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-40

V

Emitter-Base Voltage

-5.0

V

Collector Current - Continuous

-600

mA

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

60

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current (Note 2)

Continuous

Continuous @ 100°C

Pulsed

115

73

800

mA

Notes: 1. No purposefully added lead.

Mechanical Data

·

Case: SOT-363

·

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Solderable per MIL-STD-202, Method 208

·

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

·

Terminal Connections: See Diagram

·

Marking: A80, See Page 3

·

Ordering Information: See Page 3

·

Weight: 0.006 grams (approx.)

·

Combines MMBT4403 type transistor with 2N7002 type MOSFET

·

Small Surface Mount Package

·

NPN/P-Channel Complement Available: CTA2N1P

·

Lead Free/RoHS Compliant (Note 1)

SOT-363

Dim

Min

Max

A

0.10

0.30

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

F

0.30

0.40

H

1.80

2.20

J

¾

0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.25

a

0°

8°

All Dimensions in mm

B

Q1

S

Q2

D

Q2

E

Q1

C

Q1

G

Q2

Q2

Q1

SPICE MODEL: CTA2P1N