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AM29LV065MU112REF Datasheet(PDF) 30 Page - Advanced Micro Devices

Part # AM29LV065MU112REF
Description  64 Megabit (8 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  62 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV065MU112REF Datasheet(HTML) 30 Page - Advanced Micro Devices

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Am29LV065MU
September 12, 2006
DA TA
SH EET
The Write Buffer Programming Sequence can be
aborted in the following ways:
■ Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■ Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
■ Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
■ Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Accelerated Program
The device offers accelerated program operations
through the ACC pin. When the system asserts VHH on
the ACC pin, the device automatically enters the Un-
lock Bypass mode. The system may then write the
two-cycle Unlock Bypass program command se-
quence. The device uses the higher voltage on the
ACC pin to accelerate the operation. Note that the
ACC pin must not be at VHH for operations other than
accelerated programming, or device damage may re-
sult. In addition, the ACC pin must not be left floating
or unconnected; inconsistent behavior of the device
may result.
Figure 4 illustrates the algorithm for the program oper-
ation. See the table, “Erase and Program Operations”
on page 45 for parameters, and Figure 16 for timing di-
agrams.



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