LTE42012R datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Feb 21

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistor

LTE42012R

THERMAL CHARACTERISTICS

Note

1. See “

Mounting recommendations in the General part of handbook SC19a”.

CHARACTERISTICS

Tmb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting-base

Tj =75 °C

K/W

Rth mb-h

thermal resistance from mounting-base to heatsink

Tj =75 °C; note 1

0.7

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

VCB = 20 V; IE =0

−−

200

µA

IEBO

emitter cut-off current

VEB = 1.5 V; IC =0

−−

600

hFE

DC current gain

VCE =5V; IC = 400 mA

−

100

Ccb

collector-base capacitance

VCB = 16 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

−

Cce

collector-emitter capacitance

VCE = 16 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

−

1.5

−

Ceb

emitter-base capacitance

VCB = 10 V; VEB =1V;

IC =IE = 0; f = 1 MHz

−

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