Lead-free Green

DS30836 Rev. 3 - 1

1 of 4

DMN2005LPK

www.diodes.com

DMN2005LPK

N-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

·

Low On-Resistance

·

Low Gate Threshold Voltage

·

Fast Switching Speed

·

Low Input/Output Leakage

·

Ultra-Small Surface Mount Package

·

Lead Free By Design/RoHS Compliant (Note 2)

·

"Green" Device (Note 4)

·

ESD Protected Gate

D

G

H

B C

L

N

A

M

K

Mechanical Data

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Drain Current per element (Note 1)

Continuous

Pulsed (Note 3)

200

250

mA

Total Power Dissipation (Note 1)

200

mW

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width

£10mS, Duty Cycle £1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

·

Case: DFN1006-3

·

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating

94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals Connections: See Diagram

·

Terminals: Finish

¾ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

·

Marking: See Last Page

·

Ordering & Date Code Information: See Last Page

Features

UNDER DEVELOPMENT

DFN1006-3

Dim

Min

Max

Typ

A

0.95

1.075

1.00

B

0.55

0.675

0.60

C

0.45

0.55

0.50

D

0.20

0.30

0.25

G

0.47

0.53

0.50

H

0

0.05

0.03

K

0.10

0.20

0.15

L

0.20

0.30

0.25

M

¾¾

0.35

N

¾¾

0.40

All Dimensions in mm

D

S

G

TOP VIEW

ESD protected

Source

Body

Diode

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain