UNDER DEVELOPMENT

Notes:

5. Short duration test pulse used to minimize self-heating effect.

DS30836 Rev. 3 - 1

2 of 4

DMN2005LPK

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Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (per element) (Note 5)

Drain-Source Breakdown Voltage

20

¾¾

V

mA

Zero Gate Voltage Drain Current

¾¾

10

mA

Gate-Source Leakage

¾¾

±5

mA

ON CHARACTERISTICS (per element) (Note 5)

Gate Threshold Voltage

0.53

¾

1.2

V

mA

Static Drain-Source On-Resistance

¾

¾

¾

¾

¾

0.9

0.85

1.2

2.4

2.5

1.5

1.7

1.7

3.5

3.5

W

Forward Transfer Admittance

40

¾¾

mS

0

0

12

3

4

5

V

DRAIN-SOURCE VOLTAGE (V)

Fig.1 Typical Output Characteristics

0.3

0.6

0.9

TBD

V

, GATE-SOURCE VOLTAGE (V)

Fig. 2

GS

Reverse Drain Current

vs. Source-Drain Voltage

100

0

1000

200

300

400

500

600

700

800

900

0.4

0.8

1.2

1.6

2

TBD

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

ch

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

-75

-50

-25

025

50

75

100

125

150

TBD

0.1

I

DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

D,

1

0.2

0.4

0.6

0.8

1.0

TBD