AM29LV320ML112REF datasheet(58/59 Pages) AMD

58 / 59 page

Am29LV320MH/L

26517B4 January 31, 2007

D A TA

SH EE T

REVISION SUMMARY

Revision A (May 30, 2002)

Initial release as Advance Information data sheet.

Revision A+1 (September 3, 2002)

Mirrorbit 32 Mbit Device Family

Changed the 48-pin TSOP to 40-pin TSOP.

Alternate CE# Controlled Erase and Program

Operations

Added t

RH parameter to table.

Erase and Program Operations

Added t

BUSY parameter to table.

Figure 16. Program Operation Timings

Added RY/BY# to waveform.

TSOP and BGA PIN Capacitance

Added the FBGA package.

Program Suspend/Program Resume Command

Sequence

Changed 15

μs typical to maximum and added 5 μs

typical.

Erase Suspend/Erase Resume Commands

Changed typical from 20

μs to 5 μs and added a maxi-

mum of 20

μs.

Product Selector Guide

Added Note 2.

Ordering Information

Added 101R, 112R, and 120R to Valid Combinations

Table. Added Note 1.

Read-Only Operations, Erase and Program

Operations, Alternate CE# Controlled Erase and

Program Operations,

Added 101R, 112R, and 120R to speed options.

Revision A+2 (November 15, 2002)

Customer Lockable: Secured Silicon Sector NOT

Programmed or Protected At the Factory

Added second bullet and figure.

Product Selector Guide and Read-Only Operations

Added 30 ns to the 112R and 120R to Max page ac-

cess time and Max OE# Access time.

Changed the Chip Enable to Output High Z and Out-

put Enable to Output High Z to 16 ns.

Byte/Word Program Command Sequence, Sector

Erase Command Sequence, and Chip Erase

Command Sequence

Noted that the Secured Silicon Sector, autoselect, and

CFI functions are unavailable when a program or

erase operation is in progress.

Common Flash Memory Interface (CFI)

Changed CFI website address.

DC Characteristics

Added I

LR parameter symbol to table. Removed VIL,

IH, VOL, and VOH and replaced with VIL, VIH, VOL, VOH1

and V

OH2. Clarified note #5. Removed note #6.

Read-Only Operations

Added note #3.

Absolute Maximum Rating

Changed the Ambient Temperature with Power Ap-

plied from –55

°C to +125°C to –65°C to +125°C.

Revision A+3 (February 14, 2003)

Distinctive Characteristics

Corrected performance characteristics.

AC Characteristics

Added Note.

Input values in the t

WHWH1 and tWHWH2 parameters in

the Erase and Program Options table that were previ-

ously TBD. Also added notes 5 and 6.

Input values in the t

WHWH1 and tWHWH2 parameters in

the Alternate CE# Controlled Erase and Program Op-

tions table that were previously TBD. Also added notes

5 and 6.

Erase and Programming Performance

Input values into table that were previously TBD.

Added note 3 and 4.

Revision B (May 7, 2003)

Distinctive Characteristics

Added typical active read current.

Global

Converted to full datasheet version. Modified Secured

Silicon Sector Flash Memory Region section to in-

clude ESN references.

DC Characteristics

Corrected typical and maximum values for the I

CC1,

CC2, and ICC3.

Erase and Program Operations and Alternate CE#

Controlled Erase and Program Operations

Changed Accelerated Effective Write Buffer Program

Operation value.

AM29LV320ML112REF Datasheet(PDF) 58 Page - Advanced Micro Devices

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