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ISB3023 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISB3023 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISB3023 eq FQPF12N60C isc Silicon NPN Power Transistor www.iscsemi.com 1 FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 51 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.43 ℃ /W |
Similar Part No. - ISB3023 |
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Similar Description - ISB3023 |
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