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AM29SL800DB100WAI Datasheet(PDF) 18 Page - Advanced Micro Devices

Part # AM29SL800DB100WAI
Description  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  46 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29SL800DB100WAI Datasheet(HTML) 18 Page - Advanced Micro Devices

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D A TA
SH EE T
16
Am29SL800D
27546A6 January 23, 2007
Figure 3 illustrates the algorithm for the program oper-
ation. See Table 13 on page 31 for parameters, and to
Figure 17, on page 32 for timing diagrams.
1.
See Table 5 for program command sequence.
Figure 3.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 5 on
page 19 shows the address and data requirements for
the chip erase command sequence.
Any comm ands wr it ten to th e chip dur ing th e
Embedded Erase algorithm are ignored. Note that a
hardware reset during the chip erase operation imme-
diately terminates the operation. The Chip Erase
command sequence should be reinitiated once the
device has returned to reading array data, to ensure
data integrity.
The system can determine the status of the erase oper-
ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched.
Figure 4, on page 18 illustrates the algorithm for the
erase operation. See Table 13 on page 28 for parame-
ters, and to Figure 10, on page 26 for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 5 shows the address and data
requirements for the sector erase command sequence.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of
sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise the last address and command might not
be accepted, and erasure may begin. It is recom-
mended that processor interrupts be disabled during
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress



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