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ISCF8022 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISCF8022
Description  SiC N-Channel MOSFET
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8022 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8022 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8022 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8022 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8022 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISCF8022
eq IMZA120R030M1H
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.55
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.1mA
1200
-
-
V
VGS(th)
Gate-Emitter Threshold Voltage
ID = 10 mA, VDS = VGS
2.2
-
4
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 15V; ID= 33.3A,TJ= 25℃
-
40
52
mΩ
VGS= 18V; ID= 33.3A,TJ= 25℃
-
30
40
VGS= 15V; ID= 33.3A,TJ= 175℃
-
62
-
VGS= 18V; ID= 33.3A,TJ= 175℃
-
59
-
IGSS
Gate Source Leakage Current
VGS= 18V; VDS= 0V
-
-
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V; VGS = 0V;TC= 25℃
-
-
20
μA
VDS = 1200V; VGS = 0V;TC= 175℃
-
5
-
gfs
Transconductance
VDS= 20V,ID= 33.3A
-
20
-
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1MHz,
VAC= 25mV
TJ= 25℃
-
2766
-
pF
Coss
Output Capacitance
-
126
-
Crss
Reverse Transfer Capacitance
-
14
-
Qg
Total Gate Charge
VDS= 800V,
ID= 33.3A,
VGS= 0/15V,
-
112
-
nC
Qgs
Gate-Source Charge
-
28
-
Qgd
Gate-Drain Charge
-
51
-
td(on)
Turn-on Delay Time
VGS= -4/15V
ID= 20A,
VDD= 800V,
Rg= 2.5Ω,
L=120uH
-
13.4
-
ns
tr
Turn-on Rise Time
-
5.4
-
td(off)
Turn-off Delay Time
-
32
-
tf
Turn-off Fall Time
-
19
-
Eon
Turn-on energy
-
701
-
uJ
Eoff
Turn-off energy
-
79
-



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