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IXYN82N120 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXYN82N120
Description  High-Speed IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXYN82N120 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXYN82N120 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXYN82N120 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXYN82N120 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISGM2034
eq IXYN82N120
High-Speed IGBT
www.iscsemi.com
1
DESCRIPTION
· Optimized for Low Switching Losses
· 2500V~ Isolation Voltage
· Positive Thermal Coefficient of Vce(sat)
APPLICATIONS
· Power Inverters
· UPS
· Motor Drives
· SMPS
· PFC Circuits
· Welding Machines
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
120
A
IC
Collector Current-Continuous
@ TC=110℃
66
A
ICM
Pulsed Collector Current@ TC=25℃
380
A
PD
Power Dissipation @TC=25℃
600
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.25
℃
/W


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