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IRF7341Q Datasheet(PDF) 2 Page - International Rectifier |
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IRF7341Q Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7341Q 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.6A, VGS = 0V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 2.6A Qrr Reverse Recovery Charge ––– 76 114 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics 42 2.4 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.043 0.050 VGS = 10V, ID = 5.1A 0.056 0.065 VGS = 4.5V, ID = 4.42A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 10.4 ––– ––– S VDS = 10V, ID = 5.2A ––– ––– 2.0 VDS = 44V, VGS = 0V ––– ––– 25 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– 29 44 ID = 5.2A Qgs Gate-to-Source Charge ––– 2.9 4.4 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– 7.3 11 VGS = 10V td(on) Turn-On Delay Time ––– 9.2 ––– VDD = 28V tr Rise Time ––– 7.7 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 31 ––– RG = 6.0Ω tf Fall Time ––– 12.5 ––– VGS = 10V Ciss Input Capacitance ––– 780 ––– VGS = 0V Coss Output Capacitance ––– 190 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 66 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S D G |
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