2N2880 datasheet(1/2 Pages) MICROSEMI

Part #	2N2880

Description	NPN POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/315

Devices

Qualified Level

2N2880

2N3749

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Value

Units

Collector-Emitter Voltage

VCEO

80

Vdc

Collector-Base Voltage

VCBO

110

Vdc

Emitter-Base Voltage

VEBO

8.0

Vdc

Base Current

IB

0.5

Adc

Collector Current

IC

5.0

Adc

Total Power Dissipation

@ TA = 25

0C (1)

@ TC = 100

0C (2)

PT

2.0

30

W

Operating & Storage Junction Temperature Range

Top, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

R

θJC

3.33

0C/W

1) Derate linearly 11.4 mW/

0C for T

A > 25

0C

2) Derate linearly 300 mW/

0C for T

C > 100

0C

TO-59*

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 100 mAdc

V(BR)CEO

80

Vdc

Collector-Emitter Breakdown Voltage

IC = 10 µAdc

V(BR)CBO

110

Vdc

Emitter-Base Breakdown to Voltage

IE = 10 µAdc

V(BR)EBO

8.0

Vdc

Collector-Emitter Cutoff Current

VCE = 60 Vdc

ICEO

20

µAdc

Collector-Base Cutoff Current

VCB = 80 Vdc

ICBO

0.2

µAdc

Collector-Emitter Cutoff Current

VCE = 110 Vdc, VBE = -0.5

ICEX

1.0

µAdc

Emitter-Base Cutoff Current

VEB = 6.0 Vdc

IEBO

0.2

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978)620-2600 / Fax: (978) 689-0803

111604

Page 1 of 2

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