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2N6304 Datasheet(PDF) 2 Page - Advanced Power Technology |
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2N6304 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 4 page ![]() 2N6304 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Value Symbol Test Conditions Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) 15 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) 30 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) 3.5 - - Vdc ICBO Collector Cutoff Current (VCB = 5.0 Vdc, IE = 0 Vdc) - - 10 nAdc (on) HFE DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) 25 - 250 - DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit fT Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1.4 - - GHz NF Noise Figure (50 Ohms) (IC = 2 mAdc, VCE = 5.0 Vdc, f = 450 MHz) 5.0 dB CCB Collector-Base Capacitance (VCB = 10Vdc, IE = 0, f = 1 MHz) - 0.8 1.0 pF |
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