ACPDZC3V3A-HF

Comchip Technology CO., LTD.

RoHS Device

Halogen Free

SMD ESD Protection Diode

Features

- Bi-directional ESD protection.

- Low clamping voltage.

- Low leakage current.

- IEC 61000-4-2 (ESD) ; ±20KV(contact)

- IEC 61000-4-5 (surge) ; Ipp=4A

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating temperature range

Tj

°C

Storage temperature range

TSTG

-55 ~ +150

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

-55 ~ +125

Peak pulse current

IPP

A

TP = 8/20µs

4

TP = 8/20µs

±20

ESD

±20

100

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

V

Working peak reverse voltage

VRWM

3.3

Electrical Characteristics (at TA=25°C unless otherwise noted)

Breakdown voltage

VBR

V

IT = 1mA

4.5

Reverse leakage current

IR

nA

VRWM = 3.3V

100

Clamping voltage

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

0.2

VC

V

14

IPP = 1A, TP = 8/20µs

IPP = 4A, TP = 8/20µs

25

0.3

VC

V

Circuit Diagram

- Ultra small SMD package.

0.026(0.67)

0.022(0.57)

0201/DFN0603

Dimensions in inches and (millimeter)

0.015(0.37)

0.011(0.27)

0.013(0.340)

0.011(0.275)

0.002(0.06)

REF.

0.017(0.435)

0.014(0.365)

0.002(0.04)

REF.

0.011(0.275)

0.008(0.205)

0.007(0.175)

0.004(0.105)

0.007(0.175)

0.004(0.105)

REV:A

Page 1

AQW-G7060

Mechanical data

- Case: 0201/DFN0603 package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.0004 grams (approx.).

- AEC-Q101 Qualified.