Electrical Characteristics (at Ta=25°C unless otherwise noted)

SMD ESD Protection Diode

Parameter

Symbol

Unit

Reverse working voltage

Conditions

It1 = 1mA; Any I/O to GND

VRWM

3.3

Triggering voltage

Vt1

Min

Typ

Max

3.6

V

V

Comchip Technology CO., LTD.

Reverse leakage current

Surge clamping voltage (tp = 8/20µs)

TLP clamping voltage

(tp = 10/100ns)

IR

10

0.8

Vh

Dynamic resistance tp = 10/100ns, tr = 1ns

7.0

0.35

RDYN

CJ

Junction capacitance

0.3

VC

50

7.5

0.6

VRWM = 3.3V; Any I/O to GND

Ih = 100mA; Any I/O to GND

IPP = 6A; Any I/O Pin to GND

IPP = 16A; Any I/O Pin to GND

I/O Pin to GND

VR = 0V, f = 1MHz, I/O to GND

V

V

V

nA

pF

Ω

Holding voltage

VC

Page 2

QW-JP089

REV:C