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C2M0045170D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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C2M0045170D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() ISCF8030 eq C2M0045170D SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High blocking voltage with low On-Resistance · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGSS Gate-Source Opetation Voltage -10/+25 V ID Drain Current-Continuous 75 A Drain Current-Continuous@Tc=100℃ 48 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 338 W TJ Max. Operating Junction Temperature -40~150 ℃ Tstg Storage Temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.37 ℃ /W |
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