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FP150R07N3E4 Datasheet(PDF) 5 Page - Inchange Semiconductor Company Limited |
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FP150R07N3E4 Datasheet(HTML) 5 Page - Inchange Semiconductor Company Limited |
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5 / 7 page ![]() ISGM2047 eq FP150R07N3E4 IGBT Modules www.iscsemi.com 5 trr Diode Reverse Recovery Time VR= 300V, IF= 50A, -diF/dt=2100A/us, VGE = 15 V TJ= 25℃ - 75 - ns IRM Peak Reverse recovery current - 50 - A Qrr Reverse Recovery Charge - 1.7 - uC Err Reverse Recovery Energy - 2.0 - mJ NTC-THERMISTOR ELECTRICAL CHARACTERIS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT R25 Ratedresistance TC=25℃ - 5 - kΩ ΔR/R Deviation of R100 Deviation of R100 -5 - 5 % P25 Power Dissipation Power Dissipation - - 20 mW B25/50 B-Value R2 = R25exp[B25/50(1/T2-1/(298.15K))] - 3375 - k B25/80 R2 = R25exp[B25/80(1/T2-1/(298.15K))] - 3411 - k B25/100 R2 = R25exp[B25/100(1/T2-1/(298.15K))] - 3433 - k MODULE SYMBOL PARAMETER MIN TYP MAX UNIT Viso Isolation Voltage (All Terminals Shorted) 2500 - - V Tstg Storage Temperature -40 - 125 ℃ RθCH Thermal Resistance,Case to Heatsink - 0.009 - ℃ /W Rθjc Thermal Resistance,Junction-to-Case - - 3.6 ℃ /W G Weight -- 300 -- g |
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