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PCD5003A Datasheet(PDF) 34 Page - NXP Semiconductors

Part # PCD5003A
Description  Enhanced Pager Decoder for POCSAG
PDF  44 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PCD5003A Datasheet(HTML) 34 Page - NXP Semiconductors

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1999 Jan 08
34
Philips Semiconductors
Product specification
Enhanced Pager Decoder for POCSAG
PCD5003A
Notes
1. Inputs: SDA and SCL pulled up to VDD; all other inputs connected to VSS.
Outputs: RXE and ROE logic 0; REF: fref = 1⁄60 Hz; all other outputs open-circuit.
Oscillator: no crystal; external clock fosc = 76800 Hz; amplitude: VSS to VDD.
Voltage convertor disabled (SPF byte 01, bit D7 = 0; see Table 21).
2. Maximum output current is subject to absolute maximum ratings per output (see Chapter 9).
3. When ATL (open-drain output) is not activated it is high impedance.
11 DC CHARACTERISTICS (WITH VOLTAGE CONVERTER)
VDD = 2.7 V; VSS =0V; VPR =VPO; Tamb = −25 to +70 °C; Cs = 100 nF; voltage converter enabled.
12 OSCILLATOR CHARACTERISTICS
Quartz crystal type: MX-1V or equivalent. Quartz crystal parameters: f = 76800 Hz; RS(max) =35kΩ; CL = 8 pF;
C0 = 1.4 pF; C1 = 1.5 fF. Maximum overall tolerance: ±200 × 10−6 (includes: cutting, temperature, aging).
13 EEPROM CHARACTERISTICS
Note
1. Retention cannot be guaranteed for naked dies (PCD5003AU/10).
IOH
HIGH level output current
Tamb =25 °C
VIB and LED
VOH = 0.7 V
−0.6
−−2.4
mA
ATH
VOH = 0.7 V
−3.0
−−11.0
mA
INT and REF
VOH = 2.4 V
−80
−−µA
ZSD, ZSC and ZLE
VOH = 2.4 V
−60
−−µA
ATL
ATL high-impedance; note 3
−−−0.5
µA
ROE, RXE and DQC
VOH = 2.4 V
−600
−−µA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD
supply voltage
1.5
−
3.0
V
VPO(0)
output voltage; no load
VDD = 2.7 V; IPO =0
−
5.4
−
V
VPO
output voltage
VDD = 2.0 V; IPO = −250 µA
3.0
3.5
−
V
IPO
output current
VDD = 2.0 V; VPO = 2.7 V
−400
−650
−µA
VDD = 3.0 V; VPO = 4.5 V
−650
−900
−µA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
UNIT
CXO
output capacitance XTAL2
−
10
pF
gm
oscillator transconductance
VDD = 1.5 V
6
12
µS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
UNIT
NEW
erase/write cycles
1000
10000
tDR
data retention time
Tamb =70 °C; note 1
10
−
years
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT



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