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30WQ04FN Datasheet(PDF) 2 Page - International Rectifier

Part # 30WQ04FN
Description  SCHOTTKY RECTIFIER 3.5 Amp
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

30WQ04FN Datasheet(HTML) 2 Page - International Rectifier

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30WQ04FNPbF
Bulletin PD-21053 rev. B 08/06
2
www.irf.com
I
F(AV) Max. Average Forward Current
3.5
A
50% duty cycle @ T
C = 135°C, rectangular wave form
* See Fig. 5
I
FSM
Max.PeakOneCycleNon-Repetitive
500
5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7
80
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
8.0
mJ
T
J = 25 °C, IAS = 1 Amp, L = 16 mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 μsec
Frequency limited by T
J max. VA = 1.5 x VR typical
Part number
30WQ04FNPbF
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
V
FM
Max. Forward Voltage Drop
0.53
V
@ 3A
* See Fig. 1
(1)
0.67
V
@ 6A
0.49
V
@ 3A
0.62
V
@ 6A
I
RM
Max. Reverse Leakage Current
2
mA
T
J =
25 °C
* See Fig. 2
(1)
24
mA
T
J = 125 °C
V
F(TO) Threshold Voltage
0.34
V
T
J = TJ max.
r
t
Forward Slope Resistance
37.33
mΩ
C
T
Typical Junction Capacitance
189
pF
V
R = 5VDC (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance
5.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/μs (Rated VR)
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Electrical Specifications
Parameters
30WQ...
Units
Conditions
(1) Pulse Width < 300μs, Duty Cycle < 2%
T
J
Max.JunctionTemperatureRange(*)
-40 to 150
°C
T
stg
Max. Storage Temperature Range
-40 to 150
°C
R
thJC Max. Thermal Resistance Junction
4.7
°C/W DC operation
* See Fig. 4
to Case
wt
Approximate Weight
0.3 (0.01)
g (oz.)
Case Style
D - PAK
Similar to TO-252AA
Marking Device
30WQ04FN
Thermal-Mechanical Specifications
Parameters
30WQ... Units
Conditions
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM applied
A
Parameters
30WQ... Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)



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